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2SA1955

Toshiba Semiconductor
Part Number 2SA1955
Manufacturer Toshiba Semiconductor
Description Silicon PNP Epitaxial Type Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Switching and...
Datasheet PDF File 2SA1955 PDF File

2SA1955
2SA1955

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application 2SA1955 Unit: mm · Low saturation voltage: VCE (sat) (1) = −15 mV (typ.
) @IC = −10 mA/IB = −0.
5 mA · Large collector current: IC = −400 mA (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -15 -12 -5 -400 -50 100 125 -55~125 Marking Unit V V V mA mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.
4 mg (typ.
) 1 2...


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