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UPA2812T1L

Renesas
Part Number UPA2812T1L
Manufacturer Renesas
Description P-channel MOSFEF
Published Sep 17, 2013
Detailed Description Data Sheet μPA2812T1L P-channel MOSFEF –30 V, –30 A, 4.8 mΩ Description The μPA2812T1L is P-channel MOS Field Effect Tr...
Datasheet PDF File UPA2812T1L PDF File

UPA2812T1L
UPA2812T1L

Overview
Data Sheet μPA2812T1L P-channel MOSFEF –30 V, –30 A, 4.
8 mΩ Description The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
R07DS0762EJ0101 Rev.
1.
01 May 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 4.
8 mΩ MAX.
(VGS = −10 V, ID = −30 A) • 4.
5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free 8-pin HVSON(3333) Ordering Information Part No.
Lead Plating Pure Sn Packing Tape 3000 p/reel μPA2812T1L-E2-AT Note: ∗ *1 Package 8-pin HVSON (3333) typ.
0.
028 g 1.
Pb-free (This product does not contain Pb in e...


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