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UPA2806

Renesas
Part Number UPA2806
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Sep 17, 2013
Detailed Description Preliminary Data Sheet μ PA2806 MOS FIELD EFFECT TRANSISTOR Description R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ ...
Datasheet PDF File UPA2806 PDF File

UPA2806
UPA2806

Overview
Preliminary Data Sheet μ PA2806 MOS FIELD EFFECT TRANSISTOR Description R07DS0008EJ0100 Rev.
1.
00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications.
Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX.
(VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX.
(VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP.
(VDS = 10 V, VGS = 0 V, f = 1 MHz) • Built-in gate protection diode • Thin type surface mount package with heat spreader (8-pin HVSON) • RoHS Compliant Ordering Information Part No.
LEAD PLATING Pure Sn (Tin) PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ.
0.
028 g μ PA2806T1L-E1-AY μ PA2806T1L-E2-AY ∗1 ∗1 Note: ∗...


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