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2SA1937

Part Number	2SA1937
Manufacturer	Toshiba Semiconductor
Description	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications 2SA1937 Unit: mm • Hig...
Datasheet	2SA1937 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications 2SA1937 Unit: mm • High voltage: VCEO = −600 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −600 −600 −7 −0.
5 −1 −0.
25 1 10 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-7B1A temperature/current/voltage and the significant ...

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