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2SA1893

Part Number	2SA1893
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1893 Strobe Flash Applications Audio Power Amplifier Appl...
Datasheet	2SA1893 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1893 Strobe Flash Applications Audio Power Amplifier Applications 2SA1893 Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.
5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.
0 V (max) (IC = −4 V, IB = −0.
1 A) • High-power dissipation: PC = 1.
3 W Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −35 −20 −8 −5 −8 −0.
5 1.
3 ...

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