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CHA6664-QDG

United Monolithic Semiconductors
Part Number CHA6664-QDG
Manufacturer United Monolithic Semiconductors
Description 12-16GHz 1W High Power Amplifier
Published Sep 16, 2013
Detailed Description CHA6664-QDG RoHS COMPLIANT 12-16GHz 1W High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Descri...
Datasheet PDF File CHA6664-QDG PDF File

CHA6664-QDG
CHA6664-QDG

Overview
CHA6664-QDG RoHS COMPLIANT 12-16GHz 1W High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6664-QDG is a three-stages Ku-band high power amplifier.
The circuit is manufactured with a standard Power P-HEMT process: 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
Main Features 35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB) ■ 0.
25 µm Power pHEMT Technology ■ 12-16 GHz Frequency Range ■ 31.
5 dBm Saturated Output Power ■ High gain: 28dB ■ Quiescent Bias Point: 8V, 600mA ■ 24L-QFN4x4 SMD package 30 25 20 15 10 5 0 -5 -10 -15 -20 -...


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