Silicon NPN Power Transistors - Inchange Semiconductor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.
) ·Wide Area of Safe Operation ·Complement to Type 2SB1187 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1761
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iscsemi.
com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.
2A
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.
5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1MHz
fT
Current-Gain—Bandwidth Product
IE= 0.
5A; VCE= 5V
hFE Classifications
D
E
F
60-120 100-200 160-320
2SD1761
MIN TYP.
MAX UNIT
60
V
80
V
5
V
1.
0
V
1.
5
V
10 μA
10 μA
60
320
90
pF
8
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which requir...
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