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2sc2433

Part Number	2sc2433
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 6, 2013
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·High Curre...
Datasheet	2sc2433 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SA1043 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching applications ·High frequency power amplifier ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Tempe...

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