DatasheetsPDF.com

MJE200

Part Number	MJE200
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 4, 2013
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current ...
Datasheet	MJE200 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
3V(Max)@ IC = 500mA ·High Current-Gain—Bandwidth Product fT= 65MHz(Min) @ IC= 100mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage,low-power,high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Ti Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base ...

Similar Datasheet

MJE200 5 AMPERE POWER TRANSISTORS - Motorola
MJE200 NPN Epitaxial Silicon Transistor - Fairchild
MJE200 Silicon NPN Power Transistor - Inchange Semiconductor
MJE200 COMPLEMENTARY SILICON POWER TRANSISTORS - Central Semiconductor
MJE200 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
MJE200 Complementary Silicon Power Plastic Transistors - ON Semiconductor
MJE200G Complementary Silicon Power Plastic Transistors - ON Semiconductor
MJE205 5 Ampere Power Transistor - ETC
MJE205K 5 Ampere Power Transistor - ETC
MJE210 SILICON PNP TRANSISTOR - ST Microelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)