DatasheetsPDF.com

2SA1736

Part Number	2SA1736
Manufacturer	Toshiba Semiconductor
Description	PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Power Switching Applica...
Datasheet	2SA1736 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Power Switching Applications 2SA1736 Unit: mm • Low saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1.
5 A) • High speed switching time: tstg = 0.
2 μs (typ.
) • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SC4541 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −60 V VCEO −50 V VEBO −6 V IC −3 A IB −0.
6 A PC 500 PC mW 10...

Similar Datasheet

2SA1700 PNP Transistor - INCHANGE
2SA1700 PNP Epitaxial Silicon Transistor - Sanyo Semicon Device
2SA1700 Silicon PNP transistor - BLUE ROCKET ELECTRONICS
2SA1700 PNP Transistor - LGE
2SA1700 PNP Epitaxial Planar Silicon Transistor - GME
2SA1700 PNP EPITAXIAL SILICON TRANSISTOR - UTC
2SA1701 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SA1702 PNP Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SA1703 PNP/NPN Epitaxial Planar Silicon Transistor - Sanyo Semicon Device
2SA1703 Silicon PNP transistor - BLUE ROCKET ELECTRONICS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)