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2SC5386

Part Number	2SC5386
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Aug 29, 2013
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·100...
Datasheet	2SC5386 PDF File

Overview

...% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV.
·High speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current- Peak 16 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC5386 isc Website：www.
iscsemi...

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