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TFP7N60

Tak Cheong Electronics
Part Number TFP7N60
Manufacturer Tak Cheong Electronics
Published Aug 25, 2013
Description N-Channel Power MOSFET
Detailed Description TAK CHEONG ® SEM ICON DU CTO R 7A, 600V, 1.2Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination...
Datasheet PDF File TFP7N60 PDF File

TFP7N60
TFP7N60


Overview
TAK CHEONG ® SEM ICON DU CTO R 7A, 600V, 1.
2Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology.
1 2 3 1 = Gate 2 = Drain 3 = Source TO-220AB DEVICE MARKING DIAGRAM L xxyy TFP XXXX L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type FEATURES ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode.
D G S ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol VDSS VGSS ID IDM PD EAS EAR TJ Tstg Parameter Drain- Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation Derating factor above 25℃ Single Pulsed Avalanche Energy Repetitive Avalanche Energy Operating Junction Temperature Storage Temperature Range (Note 1) (Note 2) (Note 2) Value 600 ±30 7.
0 28 147 1.
18 530 14.
2 150 - 55 to +150 Units V V A A W W/℃ mJ mJ ℃ ℃ Notes: 1.
L=19.
5mH, IAS=7.
0A, VDD=50V, RG=25Ω, Starting TJ=25℃ 2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 0.
85 62.
5 Unit ℃/W ℃/W Number: DB-186 March 2010, Revision B Page 1 Free Datasheet http://www.
datasheet4u.
com/ TFP7N60 N-Channel Power MOSFET TAK CHEONG ELECTRICAL CHARACTERISTICS ® SEM ICON DU CTO R Off Characteristics (TA = 25°C unless otherwise noted) Symbol BVDSS IDSS IGSSF IGSSR Parameter Drain-Sounce Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakag...


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