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TFP70N06

Tak Cheong Electronics
Part Number TFP70N06
Manufacturer Tak Cheong Electronics
Description N-Channel Power MOSFET
Published Aug 25, 2013
Detailed Description TAK CHEONG ® SEM IC O N DU C TO R N-Channel Power MOSFET 70A, 60V, 0.014Ω GENERAL DESCRIPTION This N-Channel MOSFET is...
Datasheet PDF File TFP70N06 PDF File

TFP70N06
TFP70N06


Overview
TAK CHEONG ® SEM IC O N DU C TO R N-Channel Power MOSFET 70A, 60V, 0.
014Ω GENERAL DESCRIPTION This N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.
This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology.
1 2 3 1 = Gate 2 = Drain 3 = Source TO-220AB DEVICE MARKING DIAGRAM L xxyy TFP XXXX L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type D FEATURES ● ● ● Avalanche energy specified Gate Charge (Typical 70nC) High Ruggedness G ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol VDSS VGSS ID IDM PD EAS dv/dt TJ Tstg Parameter Drain- Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation Derating Factor above 25℃ Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Temperature Storage Temperature Range (Note 1) (Note 3) (Note 2) Value 60 ±25 70 280 158 1.
05 800 7.
0 150 - 55 to +150 S Units V V A A W W/℃ mJ V/ns ℃ ℃ Notes: 1.
L=250uH, IAS=70A, VDD=25V, RG=0Ω, Starting TJ=25℃.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
ISD ≤ 70A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ=25℃.
THERMAL CHARACTERISTICS Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 0.
95 62.
5 Unit ℃/W ℃/W Number: DB-229 August 2011, Revision A Page 1 Free Datasheet http://www.
datasheet4u.
com/ TFP70N06 TAK CHEONG ELECTRICAL CHARACTERISTICS ® SEM IC O N DU C TO R Off Characteristics (TA = 25°C unless otherwise noted) Symbol BVDSS IDSS IGSSF IGSSR Parameter Drain-Sounce Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ...


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