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09N70P

Advanced Power Electronics
Part Number 09N70P
Manufacturer Advanced Power Electronics
Description AP09N70P
Published Aug 25, 2013
Detailed Description AP09N70P/R Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simp...
Datasheet PDF File 09N70P PDF File

09N70P
09N70P



Overview
AP09N70P/R Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement GG S S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D D BVDSS RDS(ON) ID 600/675V 0.
75Ω 9A Description AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
Both TO-220 and TO-262 G type provide high blocking voltage to overcome voltage surge and sag in the D S toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
TO-220(P) The TO-220 and TO-262 package is universally preferred for all commercialindustrial applications.
The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.
G D S TO-262(R) Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - /A 600/675 ± 30 9 5 40 156 1.
25 2 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 0.
8 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200218032 Free Datasheet http://www.
datasheet4u.
com/ AP09N70P/R Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA VGS=0V, ID=1mA ΔBVDSS/ΔTj Min.
600 675 2 - Typ.
0.
6 4.
5 44 11 12 19 21 56 24 2660 170 10 Max.
Units 0.
75 4 10 100 ±100 V V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF //A Breakdown Voltage Temperature...



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