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2SA1429

Part Number	2SA1429
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1429 Power Amplifier Applications Power Switching Applica...
Datasheet	2SA1429 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1429 Power Amplifier Applications Power Switching Applications 2SA1429 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.
0 μs (typ.
) • Complementary to 2SC3669.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −80 −80 −5 −2 −1 1000 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Note1: Using continuously un...

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