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2SA1359

Part Number	2SA1359
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1359 Audio Frequency Power Amplifier Low-Speed Switching ...
Datasheet	2SA1359 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1359 Audio Frequency Power Amplifier Low-Speed Switching 2SA1359 Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos.
• Good hFE linearity • Complementary to 2SC3422.
Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −40 −40 −5 −3 −1 1.
5 10 150 −55 to 150 V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-8H1A Note: Using continuously under hea...

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