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2SA1163

Toshiba Semiconductor
Part Number 2SA1163
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applicatio...
Datasheet PDF File 2SA1163 PDF File

2SA1163
2SA1163

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications 2SA1163 Unit: mm  AEC-Q101 Qualified (Note1).
 High voltage: VCEO = −120 V  Excellent hFE linearity: hFE (IC = −0.
1 mA)/hFE (IC = −2 mA) = 0.
95 (typ.
)  High hFE: hFE = 200 to 700  Low noise: NF = 1 dB (typ.
), 10 dB (max)  Complementary to 2SC2713  Small package Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Rating ...


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