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IXTA60N10T

IXYS
Part Number IXTA60N10T
Manufacturer IXYS
Description Power MOSFET
Published Aug 9, 2013
Detailed Description TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID2...
Datasheet PDF File IXTA60N10T PDF File

IXTA60N10T
IXTA60N10T

Overview
TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 60 180 10 500 176 -55 .
.
.
+175 175 -55 .
.
.
+175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 1.
6 mm (0.
062in.
) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10.
.
65 / 2.
2.
.
14.
6 1.
13 / 10 TO-263 2.
5 TO-220 3.
0 °C °C N/lb Nm/lb.
in g g Symbol Test Condi...


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