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PTFA092213FL

Part Number	PTFA092213FL
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FETs
Published	Aug 6, 2013
Detailed Description	PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W...
Datasheet	PTFA092213FL PDF File

Overview

PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band.
These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA092213EL Package H-33288-6 PTFA092213FL Package H-34288-4/2 VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR ...

Similar Datasheet

PTFA092213EL Thermally-Enhanced High Power RF LDMOS FETs - Infineon
PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs - Infineon

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