DatasheetsPDF.com

PTFA091503EL

Part Number	PTFA091503EL
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FETs
Published	Aug 6, 2013
Detailed Description	PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MH...
Datasheet	PTFA091503EL PDF File

Overview

PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced open cavity ceramic package.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.
84MHz Bandwidth 60 50 -30 Two-carrier WCDMA Performance • Broadband ...

Similar Datasheet

PTFA091503EL Thermally-Enhanced High Power RF LDMOS FETs - Infineon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)