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PTFA091203EL

Infineon
Part Number PTFA091203EL
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Aug 6, 2013
Detailed Description PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-wat...
Datasheet PDF File PTFA091203EL PDF File

PTFA091203EL
PTFA091203EL

Overview
...t, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced open cavity ceramic package.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
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PTFA091203EL Package H-33288-6 Features Two-carrier WCDMA Performance 3GPP signal, 10 MHz carrier spacing, BW = 3.
84 MHz, PAR = 8 dB VDD = 30 V , IDQ = 1.
05 A • Broadband internal matching -15 Intermodulation Distortion (dBc) -20 -25 -30 -35 -40 -45 -50 -55 Drain Efficiency (%) 960 MHz 940 MHz 920 MHz IMD Up Efficiency di 32 34 sc 36 38 n o 40 42 d e u n ...


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