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PTFA091201GL

Part Number	PTFA091201GL
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FETs
Published	Aug 6, 2013
Detailed Description	PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W...
Datasheet	PTFA091201GL PDF File

Overview

PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
Features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.
8 MHz 0 5...

Similar Datasheet

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PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs - Infineon
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs - Infineon

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