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PTFA081501E

Part Number	PTFA081501E
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FETs
Published	Aug 6, 2013
Detailed Description	PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and...
Datasheet	PTFA081501E PDF File

Overview

PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.
They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz.
Thermally-enhanced packages provide the coolest operation available.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA081501E Package H-30248-2 PTFA081501F Package H-31248-2 IS-95 CDMA Performance VDD = 28 V, IDQ = 950 mA, ƒ = 900 MHz TCASE = 25°C TCASE = 90°C Features • • • Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free an...

Similar Datasheet

PTFA081501E Thermally-Enhanced High Power RF LDMOS FETs - Infineon
PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs - Infineon

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