DatasheetsPDF.com

K12A50D

Toshiba Semiconductor
Part Number K12A50D
Manufacturer Toshiba Semiconductor
Description TK12A50D
Published Apr 22, 2013
Detailed Description TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications ...
Datasheet PDF File K12A50D PDF File

K12A50D
K12A50D

Overview
TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.
45 Ω (typ.
) High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 12 48 45 364 12 4.
5 150 -55 to 150 http://www.
DataSheet4U.
net/ Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)