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TK12A65D

Toshiba Semiconductor
Part Number TK12A65D
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 22, 2013
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK12A65D PDF File

TK12A65D
TK12A65D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK12A65D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
46 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK12A65D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 12 A Drain current (pulsed) (Note 1) ...


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