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TK12A60D

Toshiba Semiconductor
Part Number TK12A60D
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 22, 2013
Detailed Description TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications ...
Datasheet PDF File TK12A60D PDF File

TK12A60D
TK12A60D

Overview
TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications Ф3.
2 ± 0.
2 10 ± 0.
3 Unit: mm 2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 0.
69 ± 0.
15 Ф0.
2 M A • • • • Low drain-source ON resistance: RDS (ON) = 0.
45 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 7.
5 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 12 48 45 359 12 4.
5 150 http://www.
DataSheet4U.
net/ Unit 0.
64 ± 0.
15 2.
54 V V A W mJ A mJ °C °C 13 ± 0.
5 15.
0 ± 0.
3 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B −55 to 150 Weight : 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
78 62.
5 Unit Internal Connection 2 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = ...


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