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TK12A55D

Toshiba Semiconductor
Part Number TK12A55D
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 22, 2013
Detailed Description TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK12A55D Switching Regulator Applicatio...
Datasheet PDF File TK12A55D PDF File

TK12A55D
TK12A55D

Overview
TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK12A55D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
48 Ω(typ.
) • High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Ф3.
2 ± 0.
2 10 ± 0.
3 A Unit: mm 2.
7 ± 0.
2 3.
9 3.
0 15.
0 ± 0.
3 1.
14 ± 0.
15 2.
8 MAX.
13 ± 0.
5 2.
6 ± 0.
1 4.
5 ± 0.
2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche en...


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