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RU6199

Ruichips Semiconductor
Part Number RU6199
Manufacturer Ruichips Semiconductor
Description N-Channel Advanced Power MOSFET
Published Mar 18, 2013
Detailed Description RU6199 N-Channel Advanced Power MOSFET Features Pin Description · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanch...
Datasheet PDF File RU6199 PDF File

RU6199
RU6199


Overview
RU6199 N-Channel Advanced Power MOSFET Features Pin Description · 60V/200A RDS (ON)=2.
8 mΩ(Typ.
) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-220 TO-220F TO-263 TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter http://www.
DataSheet4U.
net/ N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 60 ±25 175 -55 to 175 200 ① ② V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 800 200 140 380 220 A W 0.
45 62.
5 °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy ,Single Pulsed Storage Temperature Range 1500 mJ -55 to 150 Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A – JAN.
, 2010 www.
ruichips.
com datasheet pdf - http://www.
DataSheet4U.
net/ RU6199 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU6199 Parameter Test Condition Min.
Typ.
Max.
Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 60 1 30 2 3 4 ±100 2.
8 3.
5 V µA V nA mΩ Diode Characteristics VSD trr qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=40 A, VGS=0V ISD=40A, dlSD/dt=100A/µs 0.
8 75 150 1.
3 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Ou...


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