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2N6517

Part Number	2N6517
Manufacturer	Fairchild Semiconductor
Description	NPN Epitaxial Silicon Transistor
Published	Mar 22, 2005
Detailed Description	2N6517 — NPN Epitaxial Silicon Transistor 2N6517 NPN Epitaxial Silicon Transistor August 2010 Features • High Voltage...
Datasheet	2N6517 PDF File

Overview

2N6517 — NPN Epitaxial Silicon Transistor 2N6517 NPN Epitaxial Silicon Transistor August 2010 Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Suffix “-C” means Center Collector (1.
Emitter 2.
Collector 3.
Base) 1 TO-92 1.
Emitter 2.
Base 3.
Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value VCBO Collector-Base Voltage 2N6517 2N6517C 350 400 VCEO Collector-Emitter Voltage 2N6517 2N6517C 350 400 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 6 500 625 150 -55 ~ 150 Units V V V V V mA mW °C °C Electrical C...

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