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SSM6J216FE

Toshiba Semiconductor
Part Number SSM6J216FE
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Feb 9, 2013
Datasheet PDF File SSM6J216FE PDF File

SSM6J216FE
SSM6J216FE

Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Co...



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