DatasheetsPDF.com

BD912

Part Number	BD912
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Dec 6, 2012
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Vol...
Datasheet	BD912 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Complement to Type BD911 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -15 IB Base Current -5 PC Collector Power Dissipation @ TC=25℃ 90 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~15...

Similar Datasheet

BD900 PNP Transistor - INCHANGE
BD900 PNP Transistor - Power Innovations Limited
BD900 (BD900 / BD902) SILICON POWER TRANSISTOR - SavantIC
BD900 Silicon NPN Power Transistors - Comset Semiconductors
BD9001F Flexible Step-Down Switching Regulator - Rohm
BD9002HFP Flexible Step-Down Switching Regulator - Rohm
BD900A PNP Transistor - Power Innovations Limited
BD900A SILICON POWER TRANSISTOR - SavantIC
BD900A PNP Transistor - INCHANGE
BD901 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)