(2N6285 - 2N6287) Silicon PNP Power Transistors - Savantic
Description
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Complement to type 2N6282/6283/6284 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in general-purpose amplifier and low-frequency switching applications
PINNING PIN 1 2 3 Base Emitter DESCRIPTION
2N6285 2N6286 2N6287
Fig.
1 simplified outline (TO-3) and symbol Collector
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N6285 VCBO Collector-base voltage 2N6286 2N6287 2N6285 VCEO Collector-emitter voltage 2N6286 2N6287 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base
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CONDITIONS
VALUE -60 -80 -100 -60 -80 -100 -5 -20 -40 -0.
5 160 200 -65~200
UNIT
Open emitter
V
V
V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.
09 UNIT /W
Datasheet pdf - http://www.
DataSheet4U.
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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6285 2N6286 2N6287
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6285 VCEO(SUS) Collector-emitter sustaining voltage 2N6286 2N6287 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6285 ICEO Collector cut-off current 2N6286 2N6287 2N6285 ICEX Collector cut-off current 2N6286 2N6287 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=-10A; IB=-40mA IC=-20A ;IB=-200mA IC=-20A ;IB=-200mA IC=-10A ; VCE=-3V VCE=-30V; IB=0 VCE=-40V; IB=0
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SYMBOL
CONDITIONS
MIN -60
TYP.
MAX
UNIT
IC=-0.
2A ;IB=0
-80 -100 -2.
0 -3.
0 -4.
0 -2.
8
V
V V V V
-1.
0
mA
VCE=-50V; IB=0 VCE=-60V; VBE=-1.
5V TC=150 VCE=-80V; VBE=-1.
5V TC=150 VCE=-100V; VBE=-1.
5V TC=150 VEB=-5V; IC=0 IC=-10A ; VCE=-3V IC=-20A ; VCE=-3V IE=0; ...
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