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2N5672

Part Number	2N5672
Manufacturer	Microsemi
Description	(2N5671 / 2N5672) NPN HIGH POWER SILICON TRANSISTOR
Published	Dec 3, 2012
Detailed Description	TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level J...
Datasheet	2N5672 PDF File

Overview

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC www.
DataSheet.
net/ 2N5671 90 120 2N5672 120 150 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature Range 7.
0 10 30 6.
0 140 -65 to +200 Max.
1.
25 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.
2 mW/0C for TA > +250C 2) Derate linearly 800 mW/0C f...

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