CMOS Omnipolar High Sensitivity Micropower Hall Switch - SEC
Description
SS3212
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Features
Micropower consumption for battery powered applications Omnipolar, output switches with absolute value of North or South pole from magnet Operation down to 2.
5V High sensitivity for direct reed switch replacement applications
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
General Description
The SS3212Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology .
It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits.
This serves to place the high current-consuming portions of the circuit into a “Sleep” mode.
Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds.
If the flux density is above or below the Bop/Brp thresholds then the output transistor is driven to change states accordingly.
While in the “Sleep” cycle the output transistor is latched in its previous state.
The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems.
The output transistor of the SS3212 will be latched on (Bop) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package.
The output will be latched off (Brp) in the absence of a magnetic field.
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Applications
Solid state switch Handheld Wireless Handset Awake Switch Lid close sensor for battery powered devices Magnet proximity sensor for reed switch replacement in low duty cycle applications
1
V2.
00
May 1, 2012
Datasheet pdf - http://www.
DataSheet4U.
co.
kr/
SS3212
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Typical Application Circuit
SEC's pole-independent sensing technique allows for operation...
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