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RD02MUS1B

Mitsubishi Electric Semiconductor
Part Number RD02MUS1B
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon MOSFET Power Transistor
Features High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. ...
Published Nov 5, 2012
Datasheet PDF File RD02MUS1B PDF File

RD02MUS1B
RD02MUS1B


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