Part Number | RD02MUS1B |
Manufacturer | Mitsubishi Electric Semiconductor |
Description | Silicon MOSFET Power Transistor |
Features | High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. ... |
Published | Nov 5, 2012 |
Datasheet | RD02MUS1B PDF File |