Hi-Rel NPN bipolar transistor - STMicroelectronics
Description
2N3019HR
Hi-Rel NPN bipolar transistor 80 V, 1 A
Datasheet — production data
Features
BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 80 V 1A > 100 -65°C to +200°C
■ ■ ■ ■ ■
Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1.
Internal schematic diagram
TO-39
Description
The 2N3019HR is a silicon planar epitaxial NPN transistor in a TO-39 package.
It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification.
In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails.
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Table 1.
Device summary
Package TO-39 Lead finish Gold Solder Dip Marking 520101103 520101104 Type ESCC Flight EPPL Yes Packaging Strip pack
Order codes 2N3019HR
October 2012
This is information on a product in full production.
Doc ID 15384 Rev 3
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Electrical ratings
2N3019HR
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at Tamb ≤ 25 °C Total dissipation at Tc ≤ 25 °C Storage temperature Max.
operating junction temperature Value 140 80 7 1 0.
8 5 -65 to 200 200 Unit V V V A W W °C °C
Table 3.
Symbol RthJC RthJA
Thermal data
Parameter Thermal resistance junction-case __ Thermal resistance junction-ambient __ max max Value 35 218 Unit °C/W °C/W
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Doc ID 15384 Rev 3
Datasheet pdf - http://www.
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2N3019HR
Electrical characteristics
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified Table 4.
Symbol ICES IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Test conditions VCB...
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