DatasheetsPDF.com

SG4953S

SiliconGear
Part Number SG4953S
Manufacturer SiliconGear
Description -30V Dual P-Channel Power MOSFET
Published Oct 1, 2012
Detailed Description SG4953S -30V Dual P-Channel Power MOSFET SOP-8 VDSS , -30V RDS(ON) , 60mΩ (max.) @ VGS=-10V RDS(ON) , 90mΩ (max.) @ VGS...
Datasheet PDF File SG4953S PDF File

SG4953S
SG4953S


Overview
SG4953S -30V Dual P-Channel Power MOSFET SOP-8 VDSS , -30V RDS(ON) , 60mΩ (max.
) @ VGS=-10V RDS(ON) , 90mΩ (max.
) @ VGS=-4.
5V ID , -5A Description The SG4953S is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
Features ‧ ‧ ‧ ‧ Low On-Resistance Low Input Capacitance Low Miller Charge Low Input/Output Leakage The SG4953S meet the RoHS and Green Product requirement, Applications ‧ Motor / Body Load Control 100% EAS guaranteed with full function reliability approved.
‧ Automotive Systems ‧ Load Switch ‧ DC-DC converters and Off-line UPS Ordering Information Ordering Code SG4953S RoHS Status Halogen-Free Package SOP-8 www.
DataSheet.
net/ Package Code S Packing Tape & Reel Quantity 2,500 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed Note 1 Drain Current-Continuous Avalanche Current, L=0.
1mH Avalanche Energy, L=0.
1mH Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range TC=25°C TC=70°C TA=25°C TA=70°C TA=25°C TA=70°C TC=25°C TC=70°C Symbol VDS VGS ID IDM ID IAS EAS PD TSTG TJ Value -30 ±20 -5 -3.
9 -20 -4.
2 -3.
3 -15 11.
25 2.
1 1.
3 1.
5 0.
9 -55 to +150 -55 to +150 Unit V V A A A A A A mJ W W W W °C °C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Note 2 Maximum Junction-to-Case Note 2 Symbol RθJA RθJC Conditions Steady State Steady State Min.
Typ.
Max.
85 60 Unit °C/W °C/W DS-SG4953S-04 PAGE: 1 SiliconGear Corporation www.
SiliconGear.
com Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ SG4953S -30V Dual P-Channel Power MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Parameter Gate Threshold Voltage Drain-Source On-State Resist...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)