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SSG4953

SeCoS
Part Number SSG4953
Manufacturer SeCoS
Description Dual-P Enhancement Mode Power MOSFET
Published Oct 1, 2012
Detailed Description Elektronische Bauelemente SSG4953 -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Produ...
Datasheet PDF File SSG4953 PDF File

SSG4953
SSG4953


Overview
Elektronische Bauelemente SSG4953 -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.
5V.
The device is suitable for use as a load switch or in PWM applications.
It may be used in a common drain arrangement to from a bidirectional blocking switch.
FEATURES  Simple Drive Requirement  Lower On-resistance  Low Gate Charge MARKING 4953SS    = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch SOP-8 B A HG LD M C JK F N E REF.
A B C D E F G Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
40 0.
90 0.
19 0.
25 1.
27 TYP.
REF.
H J K L M N Millimeter Min.
Max.
0.
35 0.
49 0.
375 REF.
45° 1.
35 1.
75 0.
10 0.
25 0.
25 REF.
S1 D1 G1 D1 S2 D2 G2 D2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Continuous Drain Current @ VGS=10V 1 Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA = 25°C TA = 100°C ID IDM EAS Avalanche Current Total Power Dissipation 4 TA = 25°C IAS PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 (Max.
) RθJA Thermal Resistance Junction-Case 1 (Max.
) RθJC Ratings -30 ±20 -6 -4 -12 108 19 1.
5 -55 ~ 150 83 60 Unit V V A A mJ A W °C °C / W °C / W http://www.
SeCoSGmbH.
com/ 21-Jul-2014 Rev.
F Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SSG4953 -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Test condition Static Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0V, ID= -250μA Gate-Threshold Voltage VGS(th) -1 - -2.
5 V ...


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