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TPCC8102

Toshiba Semiconductor
Part Number TPCC8102
Manufacturer Toshiba Semiconductor
Published Oct 1, 2012
Description Field Effect Transistor Silicon P-Channel MOS Type
Detailed Description TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8102 Notebook PC Applications Portable...
Datasheet PDF File TPCC8102 PDF File

TPCC8102
TPCC8102


Overview
TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8102 Notebook PC Applications Portable Equipment Applications • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.
5 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode: Vth = -0.
8 to -2.
0 V (VDS = -10 V, ID = -1.
0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating -30 -30 ±20 -15 -45 26 1.
9 www.
DataSheet.
net/ Unit V V V A W W W mJ A mJ °C °C 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Pulsed (Note 1) (Tc = 25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation Drain power dissipation Drain power dissipation 0.
7 59 -15 1.
18 150 -55 to 150 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25℃) (Note 4) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Weight: 0.
02 g (typ.
) Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care.
Circuit Configuration 8 7 6 5 1 2 3 4 1 2009-08-06 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ TPCC8102 Thermal Characteristics Characteristic Thermal resista...


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