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SSM3J325F

Toshiba Semiconductor
Part Number SSM3J325F
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 16, 2012
Detailed Description SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Appli...
Datasheet PDF File SSM3J325F PDF File

SSM3J325F
SSM3J325F

Overview
SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications Unit: mm • 1.
5-V drive • Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.
5 V) +0.
5 2.
5-0.
3 +0.
25 1.
5-0.
15 1 2 3 +0.
1 0.
4-0.
05 2.
9±0.
2 1.
9 0.
95 0.
95 Absolute Maximum Ratings (Ta = 25°C) 0.
3 +0.
1 0.
16-0.
06 +0.
2 1.
1-0.
1 Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID (Note 1) -2.
0 A Pulse IDP (Note 1) -4.
0 Power dissipation PD (Note 2) 600 mW t = 1s 1200 Channel temperature Tch 150 °C S-MINI 1.
Gate 2.
Source 3.
Drain 0~0.
1 Storage temperature range Tstg −55 to 150 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEITA SC-59 temperature, etc.
) may cause this product to decrease in the TOSHIBA 2-3F1F reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the Weight: 12 mg (typ.
) absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2) Marking 3 Equivalent Circuit 3 KFE 1 2 1 2 Start of commercial production 2010-01 1 2016-11-10 SSM3J325F Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ.
Max Unit Drain-source breakdown voltage V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V -20 ― ― V .
(Note 4) -1...


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