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2N5415

NXP
Part Number 2N5415
Manufacturer NXP
Description PNP high-voltage transistors
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product specifica...
Datasheet PDF File 2N5415 PDF File

2N5415
2N5415


Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES • Low current (max.
200 mA) • High voltage (max.
300 V).
APPLICATIONS • Switching and linear amplification in military, industrial and consumer equipment.
1 handbook, halfpage 2N5415; 2N5416 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION DESCRIPTION PNP high-voltage transistor in a TO-39 metal package.
3 2 2 3 MAM334 1 Fig.
1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N5415 2N5416 VCEO collector-emitter voltage 2N5415 2N5416 ICM Ptot hFE peak collector current total power dissipation DC current gain 2N5415 2N5416 fT transition frequency IC = −10 mA; VCE = −10 V; f = 5 MHz Tamb ≤ 50 °C IC = −50 mA; VCE = −10 V 30 30 15 150 120 − MHz open base − − − − −200 −300 400 1 V V mA W open emitter − − −200 −350 V V CONDITIONS MIN.
MAX.
UNIT 1997 May 21 2 Philips Semiconductors Product specification PNP high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO 2N5415 2N5416 VCEO collector-emitter voltage 2N5415 2N5416 VEBO emitter-base voltage 2N5415 2N5416 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 50 °C Tcase ≤ 25 °C open collector − − − − − − − open base − − PARAMETER collector-base voltage CONDITIONS open emitter − − 2N5415; 2N5416 MIN.
MAX.
−200 −350 −200 −300 −4 −6 −200 −400 −200 1 10 +200 200 +150 V V V V V V UNIT mA mA mA W W °C °C °C −65 − −65 THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from...


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