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RJH60D5DPQ-A0

Renesas
Part Number RJH60D5DPQ-A0
Manufacturer Renesas
Description IGBT
Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = ...
Published Jul 20, 2012
Datasheet PDF File RJH60D5DPQ-A0 PDF File


RJH60D5DPQ-A0
RJH60D5DPQ-A0

Features

 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (100 ns typ.) in one package
 Trench gate and thin wafer technology
...


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