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TGF2023-05

Part Number	TGF2023-05
Manufacturer	TriQuint Semiconductor
Description	25 Watt Discrete Power GaN on SiC HEMT
Published	Jul 1, 2012
Detailed Description	TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 43.9 dBm Nomin...
Datasheet	TGF2023-05 PDF File

Overview

TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 43.
9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.
8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.
6 V Typical Technology: 0.
25 um Power GaN on SiC Chip Dimensions: 0.
82 x 1.
44 x 0.
10 mm Primary Applications • • www.
DataSheet.
net/ Defense & Aerospace Broadband Wireless Product Description Bias conditions: Vd = 28 V, Idq = 500 mA, Vg = -3.
6 V Typical The TriQuint TGF2023-05 is a discrete 5.
0 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-05 is designed using TriQuint’s proven 0.
25um GaN production process.
This process features advanced field plate te...

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