DatasheetsPDF.com

TGF2023-02

Part Number	TGF2023-02
Manufacturer	TriQuint Semiconductor
Description	12 Watt Discrete Power GaN on SiC HEMT
Published	Jul 1, 2012
Detailed Description	TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal...
Datasheet	TGF2023-02 PDF File

Overview

TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.
6 V Typical Technology: 0.
25 um Power GaN on SiC Chip Dimensions: 0.
82 x 0.
92 x 0.
10 mm Primary Applications Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.
6 V Typical • • www.
DataSheet.
net/ Defense & Aerospace Broadband Wireless Product Description The TriQuint TGF2023-02 is a discrete 2.
5 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-02 is designed using TriQuint’s proven 0.
25um GaN production process.
This process features advanced field plate techni...

Similar Datasheet

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-2-01 SiC HEMT - Qorvo
TGF2023-2-01 SiC HEMT - TriQuint Semiconductor
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT - TriQuint

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)