DatasheetsPDF.com

TGF2023-01

Part Number	TGF2023-01
Manufacturer	TriQuint Semiconductor
Description	6 Watt Discrete Power GaN on SiC HEMT
Published	Jul 1, 2012
Detailed Description	TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal ...
Datasheet	TGF2023-01 PDF File

Overview

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.
6 V Typical Technology: 0.
25 um Power GaN on SiC Chip Dimensions: 0.
82 x 0.
66 x 0.
10 mm Measured Performance Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.
6 V Typical Primary Applications • • www.
DataSheet.
net/ Defense & Aerospace Broadband Wireless Product Description The TriQuint TGF2023-01 is a discrete 1.
25 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-01 is designed using TriQuint’s proven 0.
25um GaN production process.
This process featur...

Similar Datasheet

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-2-01 SiC HEMT - Qorvo
TGF2023-2-01 SiC HEMT - TriQuint Semiconductor
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT - TriQuint Semiconductor
TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT - TriQuint

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)