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TGA9088A-SCC

TriQuint Semiconductor
Part Number TGA9088A-SCC
Manufacturer TriQuint Semiconductor
Description 20 GHz Medium Power Amplifier
Published Jun 26, 2012
Detailed Description Product Data Sheet September 26, 2002 17-21 GHz Medium Power Amplifier • • • • • • TGA9088A-SCC Key Features and Perf...
Datasheet PDF File TGA9088A-SCC PDF File

TGA9088A-SCC
TGA9088A-SCC


Overview
Product Data Sheet September 26, 2002 17-21 GHz Medium Power Amplifier • • • • • • TGA9088A-SCC Key Features and Performance 0.
25um PHEMT Technology 17-21GHz Frequency Range 22 dBm @ P2dB Nominal Pout 18.
5 dB Nominal Gain IRL>18 dB, ORL>10 dB 7V, 66mA Self Bias Primary Applications Chip Dimensions 2.
4mm x 1.
5 mm x 0.
1mm • • Satellite Systems Point-to-Point Radio Description The TriQuint TGA9088A-SCC is a 17-21 GHz 0.
125 Watt self-biased Medium Power Amplifier in MMIC form.
The part is designed using TriQuint’s proven standard 0.
25 um gate PHEMT production process with 100 um substrate technology.
This MPA provides a nominal 22 dBm of output power at 2 dB gain compression with a nominal small signal gain of 18.
5 dB.
The part provides an economical solution for a 20 GHz driver and provides application solutions for the Satellite and Point-to-Point Radio markets The TGA9088A-SCC is 100% DC and RF tested on-wafer to ensure performance compliance.
Typical Electrical Characteristics 7V, 66mA Self Bias 25 www.
DataSheet.
net/ 20 15 10 5 0 G ain (dB) 17 18 19 Frequency (GHz) 20 21 25 20 P 2 d B (d B m ) 15 10 5 0 17 18 19 Frequency (GHz) 20 21 TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.
triquint.
com 1 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ Product Data Sheet September 26, 2002 TGA9088A-SCC TABLE I MAXIMUM RATINGS 6/ SYMBOL V I + + PARAMETER Positive Supply Voltage Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V 90 mA 3.
5 mA 17 dBm 0.
615 W 150 C 320 C -65 to 150 C 0 0 0 NOTES 4/ 5/ 4/ | IG | PIN PD TCH TM TSTG 3/ 4/ 1/ 2/ 1/ 2/ These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure (TM).
For maximum life, it is recommended that junction temperatures be maintained at the lowest possible level...


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