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TGA8658-SG

TriQuint Semiconductor
Part Number TGA8658-SG
Manufacturer TriQuint Semiconductor
Description Ku Band Packaged High Power Amplifier
Published Jun 26, 2012
Detailed Description Product Data Sheet August 5, 2008 Ku Band 2W Packaged Amplifier Key Features • • • • • • • • • Package Dimensions 6.4 x...
Datasheet PDF File TGA8658-SG PDF File

TGA8658-SG
TGA8658-SG


Overview
Product Data Sheet August 5, 2008 Ku Band 2W Packaged Amplifier Key Features • • • • • • • • • Package Dimensions 6.
4 x 6.
4 x 3.
0 mm TGA8658-SG Frequency Range: 13-17 GHz Optimized for VSAT band (13.
75-14.
5GHz) 33 dB Nominal Gain Typical > 33.
5 dBm Psat in VSAT band @ 7V Bias 5-8 V @ 680 mA (Quiescent) 0.
5 μm 3MI pHEMT Technology Integrated power detector 6 lead package Package Dimensions: 6.
4 x 6.
4 x 3.
0 mm (0.
3 x 0.
3 x 0.
1 in ) VSAT Point-to-Point Primary Applications • • Fixtured Measured Performance Bias Conditions: Vd = 7 V, Idq =680 mA 40 35 30 30 20 www.
DataSheet.
net/ Gain (dB) 25 20 15 10 5 0 12 36 34 10 0 -10 -20 Output Input -30 13 14 15 16 17 18 19 1400 1200 1000 800 600 Frequency (GHz) Pout (dBm) & Gain (dB) 28 26 24 22 20 18 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 IDS Pout 400 200 0 Pin (dBm) Note: Datasheet is subject to change without notice.
IDS (mA) Data taken @ 14.
5 GHz 32 30 Gain Return Loss (dB) Gain TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.
triquint.
com 1 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ Product Data Sheet August 5, 2008 TGA8658-SG TABLE I MAXIMUM RATINGS 1/ Symbol Vd Vg Idq | Ig | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ 5/ Parameter Drain Supply Voltage Gate Supply Voltage Range Drain Supply Current (Quiescent) Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 8V -5V to 0V 1.
3 A 18 mA 21 dBm 5 W + (85°C- TB)/13 150 °C 320 °C -65 to 150 °C Notes 2/ 2/ 2/ 2/ 3/ 4/ 5/ These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
TB = Package backside temperature in degrees C.
These ratings apply to each individual FET.
www.
DataSheet.
net/ Junction operating temperature will directly affect the device median time to failure (TM).
For maximum life, it is recommended that junctio...


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