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IRF7313QPBF

Part Number	IRF7313QPBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 25, 2012
Detailed Description	PD - 96125 IRF7313QPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N...
Datasheet	IRF7313QPBF PDF File

Overview

PD - 96125 IRF7313QPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 30V RDS(on) = 0.
029Ω 3 4 6 5 Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetit...

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IRF7313QPBF HEXFET Power MOSFET - International Rectifier

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