Silicon NPN Epitaxial Type TRANSISTOR - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4209
2SC4209
Driver Stage Amplifier Applications Voltage Amplifier Applications
• Complementary to 2SA1620
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
80 80 5 300 60 200 150 −55~150
V V V mA mA mW °C °C
Note:
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 5 mA, IB = 0
hFE (1) (Note)
VCE = 2 V, IC = 50 mA
hFE (2) VCE (sat)
VBE fT Cob
VCE = 2 V, IC = 200 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.
012 g (typ.
)
Min Typ.
Max Unit
⎯ ⎯ 0.
1 μA
⎯ ⎯ 0.
1 μA
80 ⎯ ⎯
V
70 ⎯ 240
40 ⎯ ⎯⎯ 0.
55 ⎯ ⎯ 100 ⎯ 10
⎯ 0.
5 V 0.
8 V ⎯ MHz ⎯ pF
1 2007-11-01
2SC4209
2 2007-11-01
2SC4209
RESTRICTIONS ON...
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