NPN Transistor - Panasonic Semiconductor
Description
Transistors
2SC4208, 2SC4208A
Silicon NPN epitaxial planar type
For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A
5.
0±0.
2
Unit: mm
4.
0±0.
2
8.
0±0.
2
■ Features
0.
7±0.
1
0.
7±0.
2 13.
5±0.
5
• Low collector-emitter saturation voltage VCE(sat)
• Output of 1 W is obtained with a complementary pair with 2SA1619 and 2SA1619A
• Allowing supply with the radial taping
/ ■ Absolute Maximum Ratings Ta = 25°C
0.
45+–00.
.
12
0.
45+–00.
.
115
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage 2SC4208 VCBO
30
2.
3±0.
2
V
n d ge.
ed (Emitter open)
2SC4208A
60
sta tinu Collector-emitter voltage 2SC4208 VCEO
25
V
a e cycle iscon (Base open)
2SC4208A
50
life d, d Emitter-base voltage (Collector open) VEBO
7
V
n u duct type Collector current
IC
500
mA
te tin Pro ued Peak collector current
ICP
1
A
four ntin Collector power dissipation
PC
1
W
ing isco Junction temperature
Tj
150
°C
in n follow ed d Storage temperature
Tstg −55 to +150 °C
a o includestype, plan ■ Electrical Characteristics Ta = 25°C ± 3°C
c ued nce Parameter
Symbol
Conditions
M is ntin tena Collector-base voltage
isco ain (Emitter open)
2SC4208 VCBO 2SC4208A
IC = 10 µA, IE = 0
ce/D pe, m Collector-emitter voltage
D nan e ty (Base open)
2SC4208 VCEO 2SC4208A
IC = 10 mA, IB = 0
inte anc Emitter-base voltage (Collector open) Ma inten Forward current transfer ratio *1 ned ma Collector-emitter saturation voltage (pla Base-emitter saturation voltage
VEBO hFE1 *2 hFE2 VCE(sat) VBE(sat)
IE = 10 µA, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 mA
(1.
27)
(1.
27)
123
1: Emitter 2: Collector
2.
54±0.
15
3: Base
TO-92NL-A1 Package
Min Typ Max Unit
30
V
60
25
V
50
7
V
85
340
40
0.
35 0.
60
V
1.
1 1.
5
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
150
MHz
Collector output capacitance (Common base, input open circuited)
Cob VCB = 10...
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